Researchers from MIT and University of Udine fabricated a transistor that uses ultrathin layers of gallium antimonide and indium arsenide arranged in vertical nanowire heterostructures with a diameter ...
Global chip sales up; Siemens’ shift-left tool; export controls’ impact; HBM3E/HBM4 roadmap; quantum in CAE; MIT’s breakthrough; ASE’s expansion in Mexico; advanced photonic IC pilot line; UK invokes ...